A.G. Nassibian: search on Z-Library

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1

Ohmic and Schottky contacts on photochemically passivated n-GaAs surfaces

K. Prasad, L. Faraone, A.G. Nassibian

Journal:

Thin Solid Films

Year:

1991

Language:

english

File:

PDF, 344 KB

english, 1991

2

Rapid thermal annealing of Ti Schottky contacts ton-GaAs

K. Prasad, L. Faraone, A. G. Nassibian

Journal:

Journal of Materials Science: Materials in Electronics

Year:

1991

Language:

english

File:

PDF, 338 KB

english, 1991

3

Ion implant gettering of generation impurities in silicon investigated using PIXE and Rutherford backscattering spectrometry

B. Golja, A.G. Nassibian, D. Cohen

Journal:

Nuclear Instruments and Methods in Physics Research

Year:

1981

Language:

english

File:

PDF, 420 KB

english, 1981

4

Scanned electron beam alloyed ohmic contacts to n-GaAs

T.S. Kalkur, A.G. Nassibian

Journal:

Solid-State Electronics

Year:

1987

Language:

english

File:

PDF, 1.31 MB

english, 1987

5

Pulsed ruby laser diffusion of tin into GaAs

Kalkur, T.S., Nassibian, A.G., Rose, A.

Journal:

IEE Proceedings I Solid State and Electron Devices

Year:

1987

Language:

english

File:

PDF, 636 KB

english, 1987

6

Nonalloyed ohmic contacts to n-type GaAs by pulsed ruby laser diffused tin from tin-silica film

Kalkur, T.S., Nassibian, A.G., Rose, A.

Journal:

IEEE Electron Device Letters

Year:

1985

Language:

english

File:

PDF, 280 KB

english, 1985

7

Investigation of palladium as a barrier to gold diffusion in sintered ohmic contacts to n-GaAs

Prasad, K, Faraone, L, Nassibian, A G

Journal:

Semiconductor Science and Technology

Year:

1989

Language:

english

File:

PDF, 785 KB

english, 1989

8

Methods for measuring transverse coupling impedances in circular accelerators

G. Nassibian, F. Sacherer

Journal:

Nuclear Instruments and Methods

Year:

1979

Language:

english

File:

PDF, 430 KB

english, 1979

9

SiO2 masking against phosphorus diffusion using a P2O5 source

A.G. Nassibian, G. Whiting

Journal:

Solid-State Electronics

Year:

1964

Language:

english

File:

PDF, 1.16 MB

english, 1964

10

Controlled phosphorus diffusion into silicon from P2O5 vapour using a red phosphorus source

A.G. Nassibian, G. Whiting

Journal:

Solid-State Electronics

Year:

1965

Language:

english

File:

PDF, 877 KB

english, 1965

11

Effect of gold on surface properties and leakage current of MOS transistors

Journal:

Solid-State Electronics

Year:

1967

Language:

english

File:

PDF, 2.03 MB

english, 1967

12

Effect of diffused oxygen and gold on surface properties of oxidized silicon

Journal:

Solid-State Electronics

Year:

1967

Language:

english

File:

PDF, 930 KB

english, 1967

13

Effects of diffused nickel on the silicon-silicon dioxide interface

S. Liblich, A.G. Nassibian

Journal:

Solid-State Electronics

Year:

1973

Language:

english

File:

PDF, 313 KB

english, 1973

14

Effect of O+ implantation on silicon-silicon dioxide interface properties

M.E. Sproul, A.G. Nassibian

Journal:

Solid-State Electronics

Year:

1974

Language:

english

File:

PDF, 447 KB

english, 1974

15

A theory for computer evaluation and comparison of experimental CV curves of MOS capacitors

S. Liblich, A.G. Nassibian

Journal:

Solid-State Electronics

Year:

1974

Language:

english

File:

PDF, 165 KB

english, 1974

16

Gold traps in 〈100〉 silicon-silicon dioxide interfaces

J.G. Simmons, L. Faraone, A.G. Nassibian

Journal:

Solid-State Electronics

Year:

1979

Language:

english

File:

PDF, 468 KB

english, 1979

17

Annealing of SiSiO2 interface states using Ar-ion-implant-damage-gettering

B. Golja, A.G. Nassibian

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 612 KB

english, 1980

18

Characterisation of electrical and optical base controlled switching in the V-groove isolated punch through mode mist

R.B. Calligaro, A.G. Nassibian

Journal:

Solid-State Electronics

Year:

1983

Language:

english

File:

PDF, 794 KB

english, 1983

19

Determination of tunneling transmission probability through thin oxide layer in a tunnel MIS system

A.G. Nassibian, A.K. Duong

Journal:

Applications of Surface Science

Year:

1985

Language:

english

File:

PDF, 284 KB

english, 1985

20

Implant gettering and ion beam detection of generation impurities in silicon

B. Golja, A.G. Nassibian

Journal:

Microelectronics Journal

Year:

1982

Language:

english

File:

PDF, 533 KB

english, 1982

21

Rapid Electron Beam and Optical Furnace Alloying of AuGe/Ni Contacts to GaAs

A. G. Nassibian, C. E. C. Wood, M. S. Frost, D. G. Hasko, H. Ahmed, D. V. Morgan

Journal:

physica status solidi (a)

Year:

1991

Language:

english

File:

PDF, 412 KB

english, 1991

22

AuGeNi migration affected by operating conditions of GaAs FETs

J. Dell, T.S. Kalkur, Z. Meglicki, A.G. Nassibian, H.L. Hartnagel

Journal:

Solid-State Electronics

Year:

1984

Language:

english

File:

PDF, 386 KB

english, 1984

23

SEM alloyed AuGeNi ohmic contacts to GaAs

A.G. Nassibian, T.S. Kalkur

Journal:

Applications of Surface Science

Year:

1985

Language:

english

File:

PDF, 974 KB

english, 1985

24

Interface state charge in thin-oxide m.i.s.t. devices

Nassibian, A.G., Calligaro, R.B., Simmons, J.G.

Journal:

IEE Journal on SolidState and Electron Devices

Year:

1979

Language:

english

File:

PDF, 498 KB

english, 1979

25

Digital optical metal insulator silicon thyristor (o.m.i.s.t.)

Nassibian, A.G., Calligaro, R.B., Simmons, J.G.

Journal:

IEE Journal on SolidState and Electron Devices

Year:

1978

Language:

english

File:

PDF, 760 KB

english, 1978

26

Ar ion implant damage gettering of generation impurities in silicon employing voltage ramping and nitrogen backscattering

Golja, B., Nassibian, A.G.

Journal:

IEE Journal on SolidState and Electron Devices

Year:

1979

Language:

english

File:

PDF, 718 KB

english, 1979

27

The determination of interfacial and bulk properties of gold in m.o.s. structures using quasiequilibrium and non-steady-state linear voltage-ramp techniques

Faraone, L., Nassibian, A.G., Simmons, J.G.

Journal:

IEE Journal on SolidState and Electron Devices

Year:

1979

Language:

english

File:

PDF, 554 KB

english, 1979

28

Optical switching in metal tunnel-insulator n-p+ silicon devices

Moustakas, S., Hullett, J.L., Calligaro, R.B., Nassibian, A.G., Payne, D.N.

Journal:

IEE Journal on SolidState and Electron Devices

Year:

1979

Language:

english

File:

PDF, 1.11 MB

english, 1979

29

Investigation of Ar ion implant gettering of gold in silicon by m.o.s. and Rutherford backscattering techniques

Nassibian, A.G., Golja, B.

Journal:

IEE Proceedings I Solid State and Electron Devices

Year:

1980

Language:

english

File:

PDF, 874 KB

english, 1980

30

Circuit switching analysis for optically excited metal-insulator (tunnel)-silicon thyristor (MIST)

Moustakas, S., Dell, J.M., Calligaro, R.B., Nassibian, A.G., Hullett, J.L.

Journal:

IEE Proceedings I Solid State and Electron Devices

Year:

1981

Language:

english

File:

PDF, 640 KB

english, 1981

31

Optical transient switching measurements on metal-insulator (tunnel)-silicon thyristor at 0.85 μm wavelength

Calligaro, R.B., Moustakas, S., Dell, J., Nassibian, A.G.

Journal:

IEE Proceedings I Solid State and Electron Devices

Year:

1981

Language:

english

File:

PDF, 884 KB

english, 1981

32

Switching transients in metal-insulator (tunnel) - silicon thyristor under base voltage drive

Calligaro, R.B., Nassibian, A.G.

Journal:

IEE Proceedings I Solid State and Electron Devices

Year:

1981

Language:

english

File:

PDF, 755 KB

english, 1981

33

Proton-induced X-ray emission studies of generation impurities in silicon

Golja, B., Nassibian, A.G., Cohen, D.

Journal:

IEE Proceedings I Solid State and Electron Devices

Year:

1981

Language:

english

File:

PDF, 613 KB

english, 1981

34

Electrical and optical equivalence of switching in v-groove punch-through-mode mist

Calligaro, R.B., Nassibian, A.G.

Journal:

IEE Proceedings I Solid State and Electron Devices

Year:

1982

Language:

english

File:

PDF, 561 KB

english, 1982

35

Charge control model for switching transients of metal-tunnel oxide-semiconductor thyristor

Duong, A.K., Nassibian, A.G.

Journal:

IEE Proceedings I Solid State and Electron Devices

Year:

1984

Language:

english

File:

PDF, 639 KB

english, 1984

36

Lateral analysis of conventional and field-induced junction solar cells

Meglicki, Z., Nassibian, A.G., Heasell, E.L.

Journal:

IEE Proceedings J Optoelectronics

Year:

1986

Language:

english

File:

PDF, 659 KB

english, 1986

37

Parameter evaluation in automated digital deep-level transient spectroscopy (DLTS)

Nener, B.D., Lai, S.T., Faraone, L., Nassibian, A.G.

Journal:

IEEE Transactions on Instrumentation and Measurement

Year:

1993

Language:

english

File:

PDF, 645 KB

english, 1993

38

Temperature dependence of turn-on voltage of gold-doped MOSFETs

Sproul, M.E., Nassibian, A.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1975

Language:

english

File:

PDF, 814 KB

english, 1975

39

Writing of gold-doped MNOS memory devices

Calligaro, R.B., Nassibian, A.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 422 KB

english, 1978

40

Lifetime in ion implant damage gettered silicon by MOS voltage ramping

Nassibian, A.G., Golja, B.

Journal:

IEEE Transactions on Electron Devices

Year:

1979

Language:

english

File:

PDF, 242 KB

english, 1979

41

Platinum-induced hysteresis and nonvolatile memory properties in MOS systems (PLATMOS)

Nassibian, A.G., Faraone, L.

Journal:

IEEE Transactions on Electron Devices

Year:

1980

Language:

english

File:

PDF, 506 KB

english, 1980

42

The platinum doped MOST: A memory storage element

Nassibian, A.G., Jordan, D., Golja, B., Simmons, J.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1981

Language:

english

File:

PDF, 379 KB

english, 1981

43

The RF Accelerating System for the CERN PS Booster

Bigliani, U., Nassibian, G., Reich, K. H., Zanaschi, D.

Journal:

IEEE Transactions on Nuclear Science

Year:

1971

Language:

english

File:

PDF, 2.34 MB

english, 1971

44

Evolution of the RF Systfem of the CPS Booster Since the Beginning of Its Operation

Gelato, G., Magnani, L., Nassibian, G., Pedersen, F., Zanaschi, D.

Journal:

IEEE Transactions on Nuclear Science

Year:

1975

Language:

english

File:

PDF, 2.71 MB

english, 1975

45

Reliability and Maintenance Analysis of the CERN PS Booster

The PSB Staff,, Nassibian, G., Reich, K. H.

Journal:

IEEE Transactions on Nuclear Science

Year:

1977

Language:

english

File:

PDF, 633 KB

english, 1977

46

Electron beam annealed Ge-WSi-Au and Ge-Ni-WSi-Au high temperature stable ohmic contacts on n-GaAs

WÜRFL, J., NASSIBIAN, A. G., HARTNAGEL, H. L., LANGFELD, R., MAURER, C.

Journal:

International Journal of Electronics

Year:

1989

Language:

english

File:

PDF, 248 KB

english, 1989

47

Travelling Wave Kicker Magnets with Sharp Rise and Less Overshoot

Journal:

IEEE Transactions on Nuclear Science

Year:

1979

Language:

english

File:

PDF, 2.90 MB

english, 1979

48

Some new concepts of heat-flow spreading in GaAs FET structures

DELL, J., KALKUR, T. S., MEGLICKI, Z., NASSIBIAN, A. G., HARTNAGEL, H. L.

Journal:

International Journal of Electronics

Year:

1984

Language:

english

File:

PDF, 193 KB

english, 1984

49

[IEEE 1989 IEEE Particle Accelerator Conference, . 'Accelerator Science and Technology - Chicago, IL, USA (20-23 March 1989)] Proceedings of the 1989 IEEE Particle Accelerator Conference, . 'Accelerator Science and Technology - RF system for high beam intensity acceleration in the CERN PS

Garoby, R., Jamsek, J., Konrad, P., Lobeau, G., Nassibian, G.

Year:

1989

Language:

english

File:

PDF, 285 KB

english, 1989

50

A metal tunnel insulator silicon switch using MOS type gating (MOSMISS)

NASSIBIAN, A. G., DELL, J. M., PECORARI, H.

Journal:

International Journal of Electronics

Year:

1980

Language:

english

File:

PDF, 222 KB

english, 1980

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